| PART |
Description |
Maker |
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| EDD51161DBH-5BTS-F EDD51161DBH-6ETS-F EDD51161DBH- |
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
http://
Elpida Memory
|
| EDX5116ADSE-4D-E EDX5116ADSE-3A-E EDX5116ADSE-3B-E |
512M bits XDRDRAM
|
Elpida Memory, Inc.
DRAM
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| EDE5108AJBG-8E-E EDE5116AJBG-8E-E EDE5116AJBG-6E-E |
512M bits DDR2 SDRAM
|
Elpida Memory, Inc.
|
| EDE5108AHBG-5C-E EDE5108AHBG-4A-E EDE5108AHBG-8G-E |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5104AGSE1 |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5104AHSE-6E-E EDE5104AHSE |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDD5108ADTA-5C |
512M bits DDR SDRAM
|
Elpida Memory, Inc.
|
| EDD5108AGTA-5B-E EDD5108AGTA-5C-E EDD5108AGTA-6B-E |
512M bits DDR SDRAM
|
Elpida Memory
|
| EDD51163DBH-5BLS-F EDD51163DBH-6ELS-F EDD51163DBH- |
32M X 16 DDR DRAM, 5 ns, PBGA60
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
ELPIDA MEMORY INC
|
